Manufacturer Product Number:
SIHB6N80E-GE3
Product Overview
Manufacturer:
Vishay Siliconix
DiGi Electronics Part Number:
SIHB6N80E-GE3-DG
Description:
MOSFET N-CH 800V 5.4A D2PAK
Detailed Description:
N-Channel 800 V 5.4A (Tc) 78W (Tc) Surface Mount TO-263 (D2PAK)
Inventory:
13006418
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SIHB6N80E-GE3 Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Vishay
Packaging
Tube
Series
E
Packaging
Tube
Part Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
800 V
Current - Continuous Drain (Id) @ 25°C
5.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
940mOhm @ 3A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
44 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
827 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
78W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-263 (D2PAK)
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Base Product Number
SIHB6
Datasheet & Documents
Datasheets
Alternative Models
PART NUMBER
STB7ANM60N
MANUFACTURER
STMicroelectronics
QUANTITY AVAILABLE
0
DiGi PART NUMBER
STB7ANM60N-DG
UNIT PRICE
0.60
SUBSTITUTE TYPE
MFR Recommended
DIGI Certification
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