Manufacturer Product Number:
TK040N65Z,S1F
Product Overview
Manufacturer:
Toshiba Semiconductor and Storage
DiGi Electronics Part Number:
TK040N65Z,S1F-DG
Description:
MOSFET N-CH 650V 57A TO247
Detailed Description:
N-Channel 650 V 57A (Ta) 360W (Tc) Through Hole TO-247
Inventory:
90 Pcs New Original In Stock
12890476
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TK040N65Z,S1F Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Toshiba Electronic Devices and Storage Corporation
Packaging
Tube
Series
-
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
57A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
40mOhm @ 28.5A, 10V
Vgs(th) (Max) @ Id
4V @ 2.85mA
Gate Charge (Qg) (Max) @ Vgs
105 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
6250 pF @ 300 V
FET Feature
-
Power Dissipation (Max)
360W (Tc)
Operating Temperature
150°C
Mounting Type
Through Hole
Supplier Device Package
TO-247
Package / Case
TO-247-3
Base Product Number
TK040N65
Datasheet & Documents
Datasheets
Additional Information
Other Names
TK040N65Z,S1F(S
TK040N65ZS1F
Standard Package
30
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
Not Applicable
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
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