Manufacturer Product Number:
RN4906FE,LF(CT
Product Overview
Manufacturer:
Toshiba Semiconductor and Storage
DiGi Electronics Part Number:
RN4906FE,LF(CT-DG
Description:
TRANS NPN/PNP PREBIAS 0.1W ES6
Detailed Description:
Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 200MHz 100mW Surface Mount ES6
Inventory:
4000 Pcs New Original In Stock
12889128
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RN4906FE,LF(CT Technical Specifications
Category
Bipolar (BJT), Bipolar Transistor Arrays, Pre-Biased
Manufacturer
Toshiba Electronic Devices and Storage Corporation
Packaging
Tape & Reel (TR)
Series
-
Product Status
Active
Transistor Type
1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max)
100mA
Voltage - Collector Emitter Breakdown (Max)
50V
Resistor - Base (R1)
4.7kOhms
Resistor - Emitter Base (R2)
47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce
80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic
300mV @ 250µA, 5mA
Current - Collector Cutoff (Max)
100nA (ICBO)
Frequency - Transition
200MHz
Power - Max
100mW
Mounting Type
Surface Mount
Package / Case
SOT-563, SOT-666
Supplier Device Package
ES6
Base Product Number
RN4906
Datasheet & Documents
Datasheets
Additional Information
Other Names
RN4906FELF(CTCT
RN4906FELF(CBTR
RN4906FE(TE85LF)TR-DG
RN4906FE(TE85LF)CT
RN4906FELF(CBCT
RN4906FELF(CTDKR
RN4906FE,LF(CB
RN4906FELF(CBDKR-DG
RN4906FELF(CBCT-DG
RN4906FE(TE85LF)DKR
RN4906FE(TE85LF)TR
RN4906FELF(CTTR
RN4906FELF(CBDKR
RN4906FE(TE85LF)CT-DG
RN4906FELF(CBTR-DG
RN4906FE(TE85LF)DKR-DG
RN4906FE(TE85L,F)
Standard Package
4,000
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.21.0095
DIGI Certification
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