Manufacturer Product Number:
RQ3E180GNTB
Product Overview
Manufacturer:
Rohm Semiconductor
DiGi Electronics Part Number:
RQ3E180GNTB-DG
Description:
MOSFET N-CH 30V 18A 8HSMT
Detailed Description:
N-Channel 30 V 18A (Ta), 39A (Tc) 2W (Ta), 20W (Tc) Surface Mount 8-HSMT (3.2x3)
Inventory:
4770 Pcs New Original In Stock
13526567
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RQ3E180GNTB Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
ROHM Semiconductor
Packaging
Tape & Reel (TR)
Series
-
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
18A (Ta), 39A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
4.3mOhm @ 18A, 10V
Vgs(th) (Max) @ Id
2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
22.4 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1520 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
2W (Ta), 20W (Tc)
Operating Temperature
150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
8-HSMT (3.2x3)
Package / Case
8-PowerVDFN
Base Product Number
RQ3E180
Datasheet & Documents
Datasheets
Additional Information
Other Names
RQ3E180GNTBTR
RQ3E180GNTBDKR
RQ3E180GNTBCT
Standard Package
3,000
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
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