2SK2221-E
Manufacturer Product Number:

2SK2221-E

Product Overview

Manufacturer:

Renesas Electronics Corporation

DiGi Electronics Part Number:

2SK2221-E-DG

Description:

MOSFET N-CH 200V 8A TO3P
Detailed Description:
N-Channel 200 V 8A (Ta) 100W (Tc) Through Hole TO-3P

Inventory:

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12858514
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2SK2221-E Technical Specifications

Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Renesas Electronics Corporation
Packaging
-
Series
-
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25°C
8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
-
Rds On (Max) @ Id, Vgs
-
Vgs(th) (Max) @ Id
-
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
600 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
100W (Tc)
Operating Temperature
150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-3P
Package / Case
TO-3P-3, SC-65-3
Base Product Number
2SK2221

Datasheet & Documents

Datasheets
2SK2220/21

Additional Information

Standard Package
1

Environmental & Export Classification

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
certification_01
certification_02
certification_03
certification_04
cr
certification_015
certification_08
esd
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