Manufacturer Product Number:
FQD6N60CTM-WS
Product Overview
Manufacturer:
onsemi
DiGi Electronics Part Number:
FQD6N60CTM-WS-DG
Description:
MOSFET N-CH 600V 4A DPAK
Detailed Description:
N-Channel 600 V 4A (Tc) 80W (Tc) Surface Mount TO-252AA
Inventory:
12847846
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FQD6N60CTM-WS Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
onsemi
Packaging
-
Series
QFET®
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
2Ohm @ 2A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
20 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
810 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
80W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-252AA
Package / Case
TO-252-3, DPAK (2 Leads + Tab), SC-63
Base Product Number
FQD6N60
Datasheet & Documents
Datasheets
Additional Information
Other Names
FQD6N60CTM_WS
FQD6N60CTM_WS-DG
Standard Package
2,500
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Alternative Models
PART NUMBER
IPD60R2K1CEAUMA1
MANUFACTURER
Infineon Technologies
QUANTITY AVAILABLE
10286
DiGi PART NUMBER
IPD60R2K1CEAUMA1-DG
UNIT PRICE
0.17
SUBSTITUTE TYPE
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