Manufacturer Product Number:
IPB123N10N3GATMA1
Product Overview
Manufacturer:
Infineon Technologies
DiGi Electronics Part Number:
IPB123N10N3GATMA1-DG
Description:
MOSFET N-CH 100V 58A D2PAK
Detailed Description:
N-Channel 100 V 58A (Tc) 94W (Tc) Surface Mount PG-TO263-3
Inventory:
7030 Pcs New Original In Stock
12800248
Request Quote
Quantity
Minimum 1
Minimum 1
(*) is mandatory
We'll get back to you within 24 hours
We'll get back to you within 24 hours
SUBMIT
IPB123N10N3GATMA1 Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Infineon Technologies
Packaging
Tape & Reel (TR)
Series
OptiMOS™
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
58A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Rds On (Max) @ Id, Vgs
12.3mOhm @ 46A, 10V
Vgs(th) (Max) @ Id
3.5V @ 46µA
Gate Charge (Qg) (Max) @ Vgs
35 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
2500 pF @ 50 V
FET Feature
-
Power Dissipation (Max)
94W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-TO263-3
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Base Product Number
IPB123
Datasheet & Documents
Datasheets
Additional Information
Other Names
2156-IPB123N10N3GATMA1
IPB123N10N3GATMA1TR
SP000485968
IPB123N10N3 GTR-DG
IPB123N10N3G
IPB123N10N3 G
IPB123N10N3 GTR
IPB123N10N3GATMA1DKR
IPB123N10N3 GCT-DG
IPB123N10N3 G-DG
IPB123N10N3 GDKR-DG
IPB123N10N3GATMA1CT
IPB123N10N3 GDKR
IPB123N10N3 GCT
IFEINFIPB123N10N3GATMA1
Standard Package
1,000
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
Related Products
BTS110E3045ANTMA1
MOSFET N-CH 100V 10A TO220AB
IPC95R1K2P7X7SA1
MOSFET N-CH BARE DIE
IPB230N06L3GATMA1
MOSFET N-CH 60V 30A D2PAK